1999 Apr 23

2

Philips Semiconductors

Product specification

PNP medium power transistors

BC636; BC638; BC640

FEATURES

• High current (max. 1 A)

• Low voltage (max. 80 V).

APPLICATIONS

• Audio and video amplifiers.

DESCRIPTION

PNP medium power transistor in a TO-92; SOT54 plastic

package. NP complements: BC635, BC637 and BC639.

PINNING

PIN

DESCRIPTION

1

base

2

collector

3

emitter

Fig.1

Simplified outline (TO-92; SOT54)

and symbol.

3

2

MAM285

2

1

3

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

1. Transistor mounted on an FR4 printed-circuit board.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-base voltage

open emitter

BC636

−−45

V

BC638

−−60

V

BC640

−−100

V

collector-emitter voltage

open base

BC636

−−45

V

BC638

−−60

V

BC640

−−80

V

emitter-base voltage

open collector

−−5V

collector current (DC)

−−1A

peak collector current

−−1.5

A

peak base current

−−200

mA

total power dissipation

−

0.83

W

storage temperature

−65

+150

°C

junction temperature

−

150

°C

operating ambient temperature

−65

+150

°C