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BC337 Datasheet(PDF) 2 Page - NXP Semiconductors |
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BC337 Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 8 page ![]() 1999 Apr 15 2 Philips Semiconductors Product specification NPN general purpose transistor BC337 FEATURES • High current (max. 500 mA) • Low voltage (max. 45 V). APPLICATIONS • General purpose switching and amplification, e.g. driver and output stages of audio amplifiers. DESCRIPTION NPN transistor in a TO-92; SOT54 plastic package. PNP complement: BC327. PINNING PIN DESCRIPTION 1 emitter 2 base 3 collector Fig.1 Simplified outline (TO-92; SOT54) and symbol. handbook, halfpage1 3 2 MAM182 3 2 1 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Note 1. Transistor mounted on an FR4 printed-circuit board. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 50 V VCEO collector-emitter voltage open base − 45 V VEBO emitter-base voltage open collector − 5V IC collector current (DC) − 500 mA ICM peak collector current − 1A IBM peak base current − 200 mA Ptot total power dissipation Tamb ≤ 25 °C; note 1 − 625 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C |
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