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BB149 Datasheet(PDF) 2 Page - NXP Semiconductors |
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BB149 Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 8 page 1998 Sep 15 2 Philips Semiconductors Product specification UHF variable capacitance diode BB149 FEATURES • Excellent linearity • Excellent matching to 1% DMA • Very small plastic SMD package • C28: 2.1 pF; ratio 9 • Low series resistance. APPLICATIONS • Electronic tuning in UHF television tuners • VCO. DESCRIPTION The BB149 is a variable capacitance diode, fabricated in planar technology, and encapsulated in the SOD323 very small plastic SMD package. The excellent matching performance is achieved by gliding matching and a direct matching assembly procedure. The unmatched type, BB159 has the same specification. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER MIN. MAX. UNIT VR continuous reverse voltage − 30 V IF continuous forward current − 20 mA Tstg storage temperature −55 +150 °C Tj operating junction temperature −55 +125 °C Fig.1 Simplified outline (SOD323) and symbol. Marking code: P9. Cathode side indicated by a bar. handbook, 4 columns ka MAM130 ELECTRICAL CHARACTERISTICS Tj =25 °C unless otherwise specified. Note 1. VR is the value at which Cd = 9 pF. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT IR reverse current VR = 30 V; see Fig.3 − 10 nA VR = 30 V; Tj =85 °C; see Fig.3 − 200 nA rs diode series resistance f = 470 MHz; note 1 − 0.75 Ω Cd diode capacitance VR = 1 V; f = 1 MHz; see Figs 2 and 4 18 19.5 pF VR = 28 V; f = 1 MHz; see Figs 2 and 4 1.9 2.25 pF capacitance ratio f = 1 MHz 8.2 10 capacitance ratio f = 1 MHz 1.2 − capacitance matching VR = 0.5 to 28 V; in a sequence of 4 diodes (gliding) − 1% VR = 0.5 to 28 V; in a sequence of 15 diodes (gliding) − 2% C d1V () C d28V () -------------------- C d19V () C d28V () -------------------- C d ∆ C d ---------- |
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