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BB149 Datasheet(PDF) 2 Page - NXP Semiconductors

Part # BB149
Description  UHF variable capacitance diode
Download  8 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BB149 Datasheet(HTML) 2 Page - NXP Semiconductors

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1998 Sep 15
2
Philips Semiconductors
Product specification
UHF variable capacitance diode
BB149
FEATURES
• Excellent linearity
• Excellent matching to 1% DMA
• Very small plastic SMD package
• C28: 2.1 pF; ratio 9
• Low series resistance.
APPLICATIONS
• Electronic tuning in UHF television
tuners
• VCO.
DESCRIPTION
The BB149 is a variable capacitance
diode, fabricated in planar
technology, and encapsulated in the
SOD323 very small plastic SMD
package.
The excellent matching performance
is achieved by gliding matching and a
direct matching assembly procedure.
The unmatched type, BB159 has the
same specification.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
VR
continuous reverse voltage
30
V
IF
continuous forward current
20
mA
Tstg
storage temperature
−55
+150
°C
Tj
operating junction temperature
−55
+125
°C
Fig.1 Simplified outline (SOD323) and symbol.
Marking code: P9.
Cathode side indicated by a bar.
handbook, 4 columns
ka
MAM130
ELECTRICAL CHARACTERISTICS
Tj =25 °C unless otherwise specified.
Note
1. VR is the value at which Cd = 9 pF.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
IR
reverse current
VR = 30 V; see Fig.3
10
nA
VR = 30 V; Tj =85 °C; see Fig.3
200
nA
rs
diode series resistance f = 470 MHz; note 1
0.75
Cd
diode capacitance
VR = 1 V; f = 1 MHz; see Figs 2 and 4
18
19.5
pF
VR = 28 V; f = 1 MHz; see Figs 2 and 4
1.9
2.25
pF
capacitance ratio
f = 1 MHz
8.2
10
capacitance ratio
f = 1 MHz
1.2
capacitance matching
VR = 0.5 to 28 V; in a sequence of 4 diodes (gliding) −
1%
VR = 0.5 to 28 V; in a sequence of 15 diodes
(gliding)
2%
C
d1V
()
C
d28V
()
--------------------
C
d19V
()
C
d28V
()
--------------------
C
d
C
d
----------


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