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RJF0410JPE-00-J3 Datasheet(PDF) 4 Page - Renesas Technology Corp

Part # RJF0410JPE-00-J3
Description  40V - 40A - N Channel Thermal FET Power Switching
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RJF0410JPE-00-J3 Datasheet(HTML) 4 Page - Renesas Technology Corp

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RJF0410JPE
R07DS1237EJ0300 Rev.3.00
Page 4 of 7
Oct 29, 2015
25
20
15
10
-50 -25
0
25
50
75 100 125 150
5
1000
10
100
1
0.1
0.1
1
10
100
VGS = 10 V
VGS = 5 V
1
10
100
1000
100
1
10
di / dt = 50 A /
μs
VGS = 0, Ta = 25°C
0.1
1
10
100
tr
1000
100
10
1
VGS = 10 V, VDD = 30 V
PW = 300
μs, duty < 1%
tf
td(on)
td(off)
40
30
20
10
0
0.4
0.8
1.2
1.6
2.0
10000
1000
100
010
20
30
40
VGS = 0
f = 1 MHz
Coss
ID = 5 A, 10 A
ID = 5 A, 10 A, 20 A
20 A
VGS = 0 V, -5 V
5 V
Tc = -40
°C
25
°C
150
°C
Case Temperature
Tc (°C)
Static Drain to Source on State Resistance
vs. Temperature
Drain Current ID (A)
Forward Transfer Admittance vs.
Drain Current
Reverse Drain Current
IDR (A)
Body-Drain Diode Reverse
Recovery Time
Drain Current
ID (A)
Switching Characteristics
Source to Drain Voltage VSD (V)
Reverse Drain Current vs.
Source to Drain Voltage
Drain to Source Voltage VDS (V)
Typical Capacitance vs.
Drain to Source Voltage
Pulse Test
Pulse Test
VDS = 10 V
Pulse Test


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