RJF0409JSP

Preliminary

R07DS1228EJ0300 Rev.3.00

Page 5 of 7

Jul 28, 2015

200

180

160

140

120

0

100

246

8

10

ID = 0.2 A

10

μ

100

μ

1 m

10 m

100 m

1

10

100

1000

10000

10

1

0.1

0.01

0.001

0.0001

D = 1

0.5

0.2

0.1

0.05

0.02

0.01

1shot

pulse

DM

P

PW

T

D =

PW

T

θch-f(t) = γs (t) · θch - f

θch-f = 125°C/W, Ta = 25°C

When using the glass epoxy board

(FR4 40 x 40 x 1.6 mm)

10

μ

100

μ

1 m

10 m

100 m

1

10

100

1000

10000

10

1

0.1

0.01

0.001

0.0001

D = 1

0.5

0.2

0.1

0.05

0.02

0.01

1shot

pulse

DM

P

PW

T

D =

PW

T

θch-f(t) = γs (t) · θch - f

θch-f = 166°C/W, Ta = 25°C

When using the glass epoxy board

(FR4 40 x 40 x 1.6 mm)

Forward transfer admittance vs.

Drain Current

Drain Current ID (A)

Gate to Source Voltage VGS (V)

Shutdown Case Temperature vs.

Gate to Source Voltage

Pulse Width PW (S)

Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation)

Pulse Width PW (S)

Normalized Transient Thermal Impedance vs. Pulse Width

(Operation of 2 devices; allowable value per device)

0.1

1

10

10

100

1

0.1

25°C

Tc = –40°C

150°C

VDS = 10 V

Pulse Test