Nexperia

BAS116LS-Q

Low-leakage diode

11. Test information

trr

(1)

+ IF

t

output signal

tr

tp

t

10 %

90 %

VR

input signal

V = VR + IF × RS

RS = 50 Ω

IF

D.U.T.

Ri = 50 Ω

SAMPLING

OSCILLOSCOPE

mga881

(1) IR = 1 mA

Fig. 7. Reverse recovery time test circuit and waveforms

Quality information

This product has been qualified in accordance with the Automotive Electronics Council (AEC)

standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in

automotive applications.

12. Package outline

20-05-01

Dimensions in mm

cathode marking on top side

1.0

0.30

0.22

0.30

0.22

0.65

0.50

0.44

0.55

0.45

0.6

2

1

Fig. 8. Package outline DFN1006BD-2 (SOD882BD)

BAS116LS-Q

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Product data sheet

3 January 2022

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