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DA14530 Datasheet(PDF) 25 Page - Renesas Technology Corp |
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DA14530 Datasheet(HTML) 25 Page - Renesas Technology Corp |
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25 / 333 page  DA14530 Low Power Bluetooth 5.1 SoC Final Datasheet Revision 3.4 21-Dec-2021 CFR0011-120-00 25 of 332 © 2021 Renesas Electronics 3.1 Absolute Maximum Ratings Table 2: Absolute Maximum Ratings Parameter Description Conditions Min Max Unit VBAT_LIM limiting supply voltage -0.2 3.6 V VPIN_LIM_defau lt limiting voltage on a pin -0.2 3.6 V VESD_HBM_FC GQFN24 electrostatic discharge voltage (Human Body Model) RFIOm and RFIOp pins only up to 2.5 kV 4 kV VESD_CDM_FC GQFN24 electrostatic discharge voltage (Charged Device Model) 500 V TSTG storage temperature -50 150 °C 3.2 Recommended Operating Conditions Table 3: Recommended Operating Conditions Parameter Description Conditions Min Typ Max Unit VBAT Supply voltage For OTP programming, a minimum voltage of 2.25V has to be provided. Also, allowed temperature range for programming is between - -40 oC and 80 oC 1.8 3.3 V VPIN_default_53 0 voltage on a pin -0.2 VBAT +0.2 V TA ambient temperature -40 85 °C 3.3 DC Characteristics Table 4: DC Characteristics Parameter Description Conditions Min Typ Max Unit IBAT_HIBERN_0 kB battery supply current Hibernation mode, no RAM retained, no oscillator running 280 nA IBAT_HIBERN_0 kB_5DEG battery supply current Hibernation mode at 5 0C, 0kB RAM retained, no oscillator running 150 nA IBAT_HIBERN_4 8kB battery supply current Hibernation mode, 48kB RAM retained, no oscillator running 800 nA IBAT_DP_SLP_0 kB battery supply current Deep-sleep with 0 kB RAM retained, running on RCX 0.9 μA IBAT_EX_SLP_2 0kB battery supply current Extended-sleep with 20 kB RAM retained, running on RCX 1.2 μA |
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