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DA14530 Datasheet(PDF) 29 Page - Renesas Technology Corp |
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DA14530 Datasheet(HTML) 29 Page - Renesas Technology Corp |
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29 / 333 page  DA14530 Low Power Bluetooth 5.1 SoC Final Datasheet Revision 3.4 21-Dec-2021 CFR0011-120-00 29 of 332 © 2021 Renesas Electronics Parameter Description Conditions Min Typ Max Unit VIL LOW level input voltage VDD=0.9V 0.3*V DD V Table 12: Digital Pad - DC Characteristics Parameter Description Conditions Min Typ Max Unit IIH HIGH level input current VI=VBAT_HIGH=3.0V -10 10 μA IIL LOW level input current VI=VSS=0V -10 10 μA IIH_PD HIGH level input current VI=VBAT_HIGH=3.0V 60 180 μA IIL_PU LOW level input current VI=VSS=0V, VBAT_HIGH=3.0V -180 -60 μA VOH HIGH level output voltage IO=3.5mA, VBAT_HIGH=1.7V 0.8*VB AT_HI GH V VOL LOW level output voltage IO=3.5mA, VBAT_HIGH=1.7V 0.2*VB AT_HI GH V VOH_LOWDRV HIGH level output voltage IO=0.3mA, VBAT_HIGH=1.7V 0.8*VB AT_HI GH V VOL_LOWDRV LOW level output voltage IO=0.3mA, VBAT_HIGH=1.7V 0.2*VB AT_HI GH V CIN input capacitance 0.75 pF Table 13: Digital Pad with LPF - DC Characteristics Parameter Description Conditions Min Typ Max Unit CIN input capacitance Note 1 Note 2 3.85 pF Note 1 Digital pad characteristics are equal to the standard GPIO pads unless overruled or added in this table. Note 2 P0_3 and P0_4 are type B pads with selectable filter via GP_DATA_REG[P03_P04_FILT_DIS], CIN is equal to a Type A pad both with filter enabled or disabled. Table 14: Digital Pad with LPF - Recommended Operating Conditions Parameter Description Conditions Min Typ Max Unit IL_HIDRV driving current - high mode 3.5 mA IL_LODRV driving current - low mode 0.35 mA |
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