Philips Semiconductors

Product specification

83C751/87C751

80C51 8-bit microcontroller family

1998 May 01

6

PARAMETER

RATING

UNIT

Storage temperature range

–65 to +150

°C

–0.5 to +6.5

V

V

Power dissipation

1.0

W

0 to +13.0

V

10

mA

NOTES:

1. Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and

functional operation of the device at these or any conditions other than those described in the AC and DC Electrical Characteristics section

of this specification is not implied.

2. This product includes circuitry specifically designed for the protection of its internal devices from the damaging effects of excessive static

charge. Nonetheless, it is suggested that conventional precautions be taken to avoid applying greater than the rated maxima.

DC ELECTRICAL CHARACTERISTICS

SYMBOL

PARAMETER

TEST CONDITIONS

LIMITS

UNIT

SYMBOL

PARAMETER

TEST CONDITIONS

MIN

MAX

UNIT

Input low voltage, except SDA, SCL

–0.5

V

Input high voltage, except X1, RST

V

Input high voltage, X1, RST

V

SDA, SCL, P0.2

Input low voltage

–0.5

V

Input high voltage

V

Output low voltage, ports 1 and 3

0.45

V

Output low voltage, port 0.2

0.45

V

Output high voltage, ports 1 and 3

2.4

V

V

V

Output low voltage

0.4

V

Driver, receiver combined:

C

Capacitance

10

pF

Logical 0 input current, ports 1 and 3

–50

µA

–650

–750

µA

µA

Input leakage current, port 0

±10

µA

Internal pull-down resistor

25

175

k

Ω

Pin capacitance

Test freq = 1MHz,

10

pF

50

µA

12.5

13.0

V

Program current (for 87C751 only)

50

mA

Supply current (see Figure 2)

NOTES TO DC ELECTRICAL CHARACTERISTICS ON NEXT PAGE.