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CD4070BMS Datasheet(PDF) 2 Page - Renesas Technology Corp

Part # CD4070BMS
Description  CMOS Quad Exclusive OR and Exclusive NOR Gates
Download  8 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

CD4070BMS Datasheet(HTML) 2 Page - Renesas Technology Corp

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CD4070BMS, CD4077BMS
FN3322 Rev 0.00
Page 2 of 8
December 1992
Absolute Maximum Ratings
Reliability Information
DC Supply Voltage Range, (VDD) . . . . . . . . . . . . . . . -0.5V to +20V
(Voltage Referenced to VSS Terminals)
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VDD +0.5V
DC Input Current, Any One Input
10mA
Operating Temperature Range . . . . . . . . . . . . . . . . -55oC to +125oC
Package Types D, F, K, H
Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . +265oC
At Distance 1/16
 1/32 Inch (1.59mm  0.79mm) from case for
10s Maximum
Thermal Resistance . . . . . . . . . . . . . . . .
ja
jc
Ceramic DIP and FRIT Package . . . . .
80oC/W
20oC/W
Flatpack Package . . . . . . . . . . . . . . . .
70oC/W
20oC/W
Maximum Package Power Dissipation (PD) at +125oC
For TA = -55oC to +100oC (Package Type D, F, K) . . . . . . 500mW
For TA = +100oC to +125oC (Package Type D, F, K) . . . . . Derate
Linearity at 12mW/oC to 200mW
Device Dissipation per Output Transistor . . . . . . . . . . . . . . . 100mW
For TA = Full Package Temperature Range (All Package Types)
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
CONDITIONS (NOTE 1)
GROUP A
SUBGROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Supply Current
IDD
VDD = 20V, VIN = VDD or GND
1
+25oC-
2
A
2
+125oC
-
200
A
VDD = 18V, VIN = VDD or GND
3
-55oC-
2
A
Input Leakage Current
IIL
VIN = VDD or GND
VDD = 20
1
+25oC
-100
-
nA
2
+125oC
-1000
-
nA
VDD = 18V
3
-55oC
-100
-
nA
Input Leakage Current
IIH
VIN = VDD or GND
VDD = 20
1
+25oC
-
100
nA
2
+125oC
-
1000
nA
VDD = 18V
3
-55oC
-
100
nA
Output Voltage
VOL15
VDD = 15V, No Load
1, 2, 3
+25oC, +125oC, -55oC-
50
mV
Output Voltage
VOH15
VDD = 15V, No Load (Note 3)
1, 2, 3
+25oC, +125oC, -55oC14.95
-
V
Output Current (Sink)
IOL5
VDD = 5V, VOUT = 0.4V
1
+25oC0.53
-
mA
Output Current (Sink)
IOL10
VDD = 10V, VOUT = 0.5V
1
+25oC1.4
-
mA
Output Current (Sink)
IOL15
VDD = 15V, VOUT = 1.5V
1
+25oC3.5
-
mA
Output Current (Source)
IOH5A
VDD = 5V, VOUT = 4.6V
1
+25oC-
-0.53
mA
Output Current (Source)
IOH5B
VDD = 5V, VOUT = 2.5V
1
+25oC-
-1.8
mA
Output Current (Source)
IOH10
VDD = 10V, VOUT = 9.5V
1
+25oC-
-1.4
mA
Output Current (Source)
IOH15
VDD = 15V, VOUT = 13.5V
1
+25oC-
-3.5
mA
N Threshold Voltage
VNTH
VDD = 10V, ISS = -10
A1
+25oC
-2.8
-0.7
V
P Threshold Voltage
VPTH
VSS = 0V, IDD = 10
A1
+25oC0.7
2.8
V
Functional
F
VDD = 2.8V, VIN = VDD or GND
7
+25oCVOH >
VDD/2
VOL <
VDD/2
V
VDD = 20V, VIN = VDD or GND
7
+25oC
VDD = 18V, VIN = VDD or GND
8A
+125oC
VDD = 3V, VIN = VDD or GND
8B
-55oC
Input Voltage Low
(Note 2)
VIL
VDD = 5V, VOH > 4.5V, VOL < 0.5V
1, 2, 3
+25oC, +125oC, -55oC-
1.5
V
Input Voltage High
(Note 2)
VIH
VDD = 5V, VOH > 4.5V, VOL < 0.5V
1, 2, 3
+25oC, +125oC, -55oC3.5
-
V
Input Voltage Low
(Note 2)
VIL
VDD = 15V, VOH > 13.5V,
VOL < 1.5V
1, 2, 3
+25oC, +125oC, -55oC-
4
V
Input Voltage High
(Note 2)
VIH
VDD = 15V, VOH > 13.5V,
VOL < 1.5V
1, 2, 3
+25oC, +125oC, -55oC11
-
V
NOTES: 1. All voltages referenced to device GND, 100% testing being
implemented.
2. Go/No Go test with limits applied to inputs.
3. For accuracy, voltage is measured differentially to VDD. Limit
is 0.050V max.


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