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M5M51008DFP Datasheet(PDF) 6 Page - Mitsubishi Electric Semiconductor |
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M5M51008DFP Datasheet(HTML) 6 Page - Mitsubishi Electric Semiconductor |
6 / 8 page MITSUBISHI LSIs M5M51008DFP,VP,RV,KV,KR -55H, -70H 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM Ver. 1.1 MITSUBISHI ELECTRIC Write cycle ( S1 control mode) Write cycle (S2 control mode) tsu (S1) (Note 3) (Note 3) trec (W) th (D) tCW (Note 5) (Note 3) (Note 3) tsu (A) (Note 4) tsu (D) th (D) tCW (Note 5) (Note 3) (Note 3) tsu (S2) trec (W) tsu (A) (Note 4) (Note 3) (Note 3) tsu (D) DATA IN STABLE DATA IN STABLE DQ1~8 S1 S2 W A0~16 DQ1~8 S1 S2 W A0~16 Note 3: Hatching indicates the state is "don't care". 4: Writing is executed while S2 high overlaps S1 and W low. 5: When the falling edge of W is simultaneously or prior to the falling edge of S1 or rising edge of S2, the outputs are maintained in the high impedance state. 6: Don't apply inverted phase signal externally when DQ pin is output mode. 6 |
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