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M5M51008DFP Datasheet(PDF) 4 Page - Mitsubishi Electric Semiconductor |
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M5M51008DFP Datasheet(HTML) 4 Page - Mitsubishi Electric Semiconductor |
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4 / 8 page  MITSUBISHI LSIs M5M51008DFP,VP,RV,KV,KR -55H, -70H 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM Ver. 1.1 MITSUBISHI ELECTRIC (2) READ CYCLE (3) WRITE CYCLE Symbol Parameter tCR Read cycle time Address access time Unit ns ns ns ns ns ns ns ns ns ns ns ns Symbol Parameter Unit ns ns ns ns ns ns ns ns ns ns ns ns ns Limits ta(S1) ta(S2) ta(OE) tdis(S1) tdis(S2) tdis(OE) ten(S1) ten(S2) ten(OE) tV(A) ta(A) Limits AC ELECTRICAL CHARACTERISTICS (Ta=0~70°C, 5V±10% unless otherwise noted ) (1) MEASUREMENT CONDITIONS Chip select 1 access time Chip select 2 access time Output enable access time Output disable time after S1 high Output disable time after S2 low Output disable time after OE high Output enable time after S1 low Output enable time after S2 high Output enable time after OE low Data valid time after address 70 70 70 35 25 25 25 70 10 10 5 10 Write cycle time Write pulse width Address setup time Address setup time with respect to W Chip select 1 setup time Chip select 2 setup time Data setup time Data hold time Write recovery time Output disable time from W low Output disable time from OE high Output enable time from W high Output enable time from OE low 25 25 70 50 0 55 55 55 30 0 0 5 5 Input pulse level VIH=2.4V,VIL=0.6V (-70H) VIH=3.0V,VIL=0.0V (-55H) Input rise and fall time 5ns Reference level VOH=VOL=1.5V Output loads Fig.1, CL=100pF (-70H) CL=30pF (-55H) CL=5pF (for ten,tdis) Transition is measured ± 500mV from steady state voltage. (for ten,tdis) ............... ..................... ...... ................ Fig.1 Output load Min Max -70H Max Min tCW tw(W) tsu(A) tsu(A-WH) tsu(S1) tsu(S2) tsu(D) th(D) trec(W) tdis(W) tdis(OE) ten(W) ten(OE) -70H CL ( Including scope and JIG ) 990 Ω 1.8k Ω VCC DQ 20 20 55 45 0 50 50 50 25 0 0 5 5 Max Min -55H 55 55 55 30 20 20 20 55 5 5 5 5 Min Max -55H 4 |
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