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M5M51008BFP Datasheet(PDF) 3 Page - Mitsubishi Electric Semiconductor |
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M5M51008BFP Datasheet(HTML) 3 Page - Mitsubishi Electric Semiconductor |
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3 / 7 page  MITSUBISHI LSIs M5M51008BFP,VP,RV,KV,KR -70VL,-10VL,-12VL,-15VL, -70VLL,-10VLL,-12VLL,-15VLL 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM 1997-1/21 MITSUBISHI ELECTRIC 3 ABSOLUTE MAXIMUM RATINGS CAPACITANCE Symbol Parameter Test conditions pF pF Unit Max 6 8 Typ Min Limits VI=GND, VI=25mVrms, f=1MHz VO=GND,VO=25mVrms, f=1MHz Input capacitance Output capacitance CI CO Parameter Supply voltage Input voltage Output voltage Power dissipation Operating temperature Storage temperature Unit V V V mW °C °C Conditions With respect to GND Ta=25°C 700 0~70 – 65~150 Ratings Symbol Vcc VI VO Pd Topr Tstg DC ELECTRICAL CHARACTERISTICS (Ta=0~70°C, unless otherwise noted) Symbol Parameter V V V Max Typ Limits Min Test conditions Unit V µA – 0.3*~4.6 – 0.3*~Vcc + 0.3 (Ta=0~70°C, unless otherwise noted) 0~Vcc * –3.0V in case of AC ( Pulse width ≤ 30ns ) Note 1: Direction for current flowing into an IC is positive (no mark). 2: Typical value is Vcc = 3V, Ta = 25°C mA * –3.0V in case of AC ( Pulse width ≤ 30ns ) µA µA mA V Vcc +0.3V 0.6 2.0 – 0.3 2.4 0.33 Stand-by current 0.4 ±1 Active supply current (Min cycle ) Active supply current (1MHz) 55 11 Vcc -0.5V ±1 30 15 10 3 VIH VIL VOH1 VOH2 VOL II IO ICC1 ICC2 ICC3 ICC4 High-level input voltage Low-level input voltage High-level output voltage 1 High-level output voltage 2 Low-level output voltage Input current Output current in off-state Stand-by current IOH= –0.5mA IOH= –0.05mA IOL=2mA VI=0~Vcc S1=VIH or S2=VIL or OE=VIH VI/O=0~VCC S1=VIL,S2=VIH, other inputs=VIH or VIL Output-open(duty 100%) 1) S2 ≤ 0.2V 2) S1 ≥ VCC–0.2V, S2 ≥ VCC–0.2V other inputs=0~VCC S1=VIH or S2=VIL, other inputs=0~VCC Vcc +0.3V 0.6 2.0 – 0.3 2.4 0.33 0.4 ±1 35 20 60 12 Vcc -0.5V ±1 10 3 -L -LL Max Typ Min VCC=3.3±0.3V VCC=3.0±0.3V -12VL, -12VLL -15VL, -15VLL -70VL, -70VLL -10VL, -10VLL (Max 4.6) |
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