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RP114X Datasheet(PDF) 6 Page - Nisshinbo Micro Devices Inc. |
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RP114X Datasheet(HTML) 6 Page - Nisshinbo Micro Devices Inc. |
6 / 36 page ![]() RP114x No.EA-236-220901 6 ELECTRICAL CHARACTERISTICS VIN = VSET(1)+1.0 V (VSET > 1.5 V),VIN = 2.5 V (VSET ≤ 1.5V),IOUT = 1 mA,CIN = COUT = 1.0 µF, unless otherwise noted. The specifications in are guaranteed by design engineering at -40ºC ≤ Ta ≤ 85ºC. RP114xxxxB/D Electrical Characteristics (Ta=25 °C) Symbol Item Conditions Min. Typ. Max. Unit VOUT Output Voltage Ta = 25 °C VSET > 2.0 V ×0.99 ×1.01 V VSET ≤ 2.0 V -20 +20 mV -40 °C ≤ Ta ≤ 85°C VSET > 2.0 V ×0.97 ×1.03 V VSET ≤ 2.0 V -60 +60 mV IOUT Output Current 300 mA ∆VOUT/∆IOUT Load Regulation 1 mA ≤ IOUT ≤ 300 mA 15 40 mV VDIF Dropout Voltage Please refer to Product-specific Electrical Characteristics attached. ISS Supply Current IOUT = 0 mA 50 75 μA Istandby Standby Current VCE = 0 V 0.1 1.0 μA ∆VOUT / ∆VIN Line Regulation VSET + 0.5 V ≤ VIN ≤ 5.25 V (VIN ≥ 1.4 V) 0.02 0.10 %/V RR Ripple Rejection f=1kHz, Ripple 0.2 Vp-p, VIN=VSET +1V, IOUT = 30 mA (When VSET ≤ 2.0 V, VIN = 3.0 V) 75 dB ∆VOUT/∆Ta Output Voltage Temperature Coefficient -40 °C ≤ Ta ≤ 85°C ±80 ppm / °C ISC Short Current Limit VOUT = 0 V 60 mA IPD CE Pull-down Current 0.3 0.6 μA VCEH CE Input Voltage “H” 1.0 V VCEL CE Input Voltage “L” 0.4 V en Output Noise BW = 10 Hz to 100 kHz, IOUT = 30 mA 75 μVrms RLOW Low Output Nch. On Resistance (RP114xxxxD Only) VIN = 4.0 V, VCE = 0 V 50 Ω All test items listed under Electrical Characteristics are done under the pulse load condition (Tj ≈ Ta = 25ºC) except for Output Noise, Ripple Rejection, and Output Voltage Temperature Coefficient. (1) VSET: Set Output Voltage |
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