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V3020TP8B Datasheet(PDF) 2 Page - EM Microelectronic - MARIN SA

Part # V3020TP8B
Description  Ultra Low Power 1-Bit 32 kHz RTC
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Manufacturer  EMMICRO [EM Microelectronic - MARIN SA]
Direct Link  http://www.emmicroelectronic.com
Logo EMMICRO - EM Microelectronic - MARIN SA

V3020TP8B Datasheet(HTML) 2 Page - EM Microelectronic - MARIN SA

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R
V3020
Copyright © 2005, EM Microelectronic-Marin SA
2
www.emmicroelectronic.com
Absolute Maximum Ratings
Parameter
Symbol
Conditions
Maximum voltage at VDD
VDDmax
VSS + 7.0V
Minimun voltage at VDD
VDDmin
VSS – 0.3V
Maximum voltage at any
signal pin
Vmax
VDD + 0.3V
Minimum voltage at any signal
pin
Vmin
VSS – 0.3V
Maximum storage
temperature
TSTOmax
+150°C
Minimum storage temperature
TSTOmin
-65°C
Electrostatic discharge
maximum to MIL-STD-883C
method 3015.7 with ref. to VSS
VSmax
1000V
Maximum soldering conditions
TSmax
250°C x 10s
Table 1
Stresses above these listed maximum ratings may cause
permanent damages to the device. Exposure beyond
specified operating conditions may affect device reliability
or cause malfunction.
Handling Procedures
This device has built-in protection against high static
voltages or electric fields; however, anti-static precautions
must be taken as for any other CMOS component. Unless
otherwise specified, proper operation can only occur when
all terminal voltages are kept within the voltage range.
Unused inputs must always be tied to a defined logic
voltage level.
Operating Conditions
Parameter
Symbol
Min
Typ
Max
Unit
Operating temperature
1)
TA
-40
+125
°C
Logic supply voltage
VDD
1.2
5.0
5.5
V
Supply voltage dv/dt
(power-up & power-down)
6
V/µs
Decoupling capacitor
100
nF
Crystal Characteristics
Frequency
2)
f
32.768
kHz
Load capacitance
CL
7
8.2
12.5
pF
Series resistance
RS
35
50
k
Table 2
1)
The maximum operating temperature is confirmed by
sampling at initial device qualification. In production,
all devices are tested at +85°C. On request, devices
tested at +125°C can be supplied.
2)
See Fig. 5
Electrical Characteristics (standard temperature range)
VDD= 5.0V ±10%, VSS = 0V and TA=-40 to +85°C, unless otherwise specified
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Total static supply
ISS
All outputs open, all inputs at VDD
VDD = 3.0V, address 0 = 0
TA = 0 to +°70°C
390
600
490
nA
nA
Total static supply
ISS
All outputs open, all inputs at VDD
VDD = 5V, address 0 = 0
TA = 0 to +°70°C
460
800
600
nA
nA
Dynamic current
ISS
I/O to VSS through 1MΩ
RD = VSS, WR = VDD,
CS = 4 MHz
address 0 = 0, read all 0
300
µA
Input / Output
Input logic low
VIL
1.0
V
Input logic high
VIH
3.5
V
Output logic low
VOL
IOL = 4 mA
0.4
V
Output logic high
VOH
IOH = 4 mA
2.4
V
Input leakage
IIN
0.0 < VIN < 5.0V
0.1
1
µA
Output tri-state leakage on I/O
pin
ITS
CS high, and address 0, bit 0, low
0.1
1
µA
Oscillator
Starting voltage
VSTA
1.2
V
Input capacitance on XI
CIN
TA = +25°C
13
pF
Output capacitance on XO
COUT
TA = +25°C
9
pF
Start-up time
TSTA
1
s
Frequency stability
∆f/f
1.5 ≤ VDD ≤ 5.5V, TA = +25°C
0.3
0.5
ppm/V
Frequency Measurement Mode
Current source on I/O pin
pulsed on/off @ 256 Hz
IONF
CS high, addr.0, bit 0, high
VI/O = 1V
10
25
60
µA
Table 3


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