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SGC-4363Z Datasheet(PDF) 1 Page - SIRENZA MICRODEVICES |
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SGC-4363Z Datasheet(HTML) 1 Page - SIRENZA MICRODEVICES |
1 / 5 page ![]() Preliminary Information Broomfield, CO 80021 1 EDS-104977 Rev A The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2005 Sirenza Microdevices, Inc.. All worldwide rights reserved. 303 S. Technology Ct. Phone: (800) SMI-MMIC http://www.sirenza.com Product Description SGC-4363Z Pb RoHS Compliant & Package Green 50-4000 MHz Silicon Germanium Cascadable Gain Block Product Features • Single Fixed 3V Supply • Supply Dropping Resistor not required • Patented Self-Bias Circuitry • P1dB = 12.4 dBm at 1950 MHz • IP3 = 26.6 dBm at 1950 MHz • Robust 1000V ESD, Class 1C HBM Applications • PA Driver Amplifier • Cellular, PCS, GSM, UMTS • IF Amplifier • Wireless Data, Satellite Sirenza Microdevices’ SGC-4363Z is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with a patented active bias network. The active bias network provides stable current over temperature and process Beta variations. Designed to run directly from a 3V supply, the SGC-4363Z does not require a dropping resistor as compared to typical Darlington amplifiers. The SGC-4363Z is designed for high linearity 3V gain block applications that require small size and minimal external components. It is internally matched to 50 ohms. The matte tin finish on Sirenza’s lead-free “Z” package is applied using a post annealing process to mitigate tin whisker formation and is RoHS compliant per EU Directive 2002/95. The package body is manufactured with green molding compounds that contain no antimony trioxide or halogenated fire retardants. Gain & Return Loss VD = 3V, ID = 52mA (Typ.) 0 5 10 15 20 01 234 Frequency (GHz) -40 -30 -20 -10 0 S22 S21 S11 Bias Tee Data, ZS = ZL = 50 Ohms, TL = 25C Symbol Parameters Units Frequency Min. Typ. Max. 850 MHz 16.7 1950 MHz 13.0 2400 MHz 11.8 850 MHz 13.3 1950 MHz 12.4 2400 MHz 11.8 850 MHz 28.8 1950 MHz 26.6 2400 MHz 25.5 IRL Input Return Loss dB 1950 MHz 15.5 ORL Output Return Loss dB 1950 MHz 12.9 NF Noise Figure dB 1930 MHz 4.0 VD Device Operating Voltage V 3 ID Device Operating Current mA 48 52 56 Rth, j-l Thermal Resistance (junction to lead) °C/W 180 Small Signal Gain G P1dB Bias Tee Data ZS = ZL = 50 Ohms Pout per tone = -5 dBm Test Conditions: VD = 3.0V ID = 52mA Typ. TL = 25°C OIP3 Tone Spacing = 1MHz OIP3 Output Third Order Intercept Point Output Power at 1dB Compression dB dBm dBm |
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