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XN4210 Datasheet(PDF) 1 Page - Panasonic Semiconductor |
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XN4210 Datasheet(HTML) 1 Page - Panasonic Semiconductor |
1 / 3 page ![]() 1 Composite Transistors XN04210 (XN4210) Silicon NPN epitaxial planer transistor For switching/digital circuits I Features G Two elements incorporated into one package. (Transistors with built-in resistor) G Reduction of the mounting area and assembly cost by one half. I Basic Part Number of Element G UNR1210(UN1210) × 2 elements I Absolute Maximum Ratings (Ta=25˚C) 1 : Collector (Tr1) 4 : Collector (Tr2) 2 : Base (Tr2) 5 : Base (Tr1) 3 : Emitter (Tr2) 6 : Emitter (Tr1) EIAJ : SC–74 Mini6-G1 Package Unit: mm Marking Symbol: 8Z Internal Connection Parameter Symbol Ratings Unit Collector to base voltage VCBO 50 V Collector to emitter voltage VCEO 50 V Collector current IC 100 mA Total power dissipation PT 300 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 to +150 ˚C Rating of element Overall I Electrical Characteristics (Ta=25˚C) Parameter Symbol Conditions min typ max Unit Collector to base voltage VCBO IC = 10 µA, I E = 0 50 V Collector to emitter voltage VCEO IC = 2mA, IB = 0 50 V Collector cutoff current ICBO VCB = 50V, IE = 0 0.1 µA ICEO VCE = 50V, IB = 0 0.5 µA Emitter cutoff current IEBO VEB = 6V, IC = 0 0.01 mA Forward current transfer ratio hFE VCE = 10V, IC = 5mA 160 460 Collector to emitter saturation voltage VCE(sat) IC = 10mA, IB = 0.3mA 0.25 V Output voltage high level VOH VCC = 5V, VB = 0.5V, RL = 1k Ω 4.9 V Output voltage low level VOL VCC = 5V, VB = 2.5V, RL = 1kΩ 0.2 V Transition frequency fT VCB = 10V, IE = –2mA, f = 200MHz 150 MHz Input resistance R1 –30% 47 +30% k Ω 2.90 1.9±0.1 0.16 +0.10 –0.06 (0.95) 0.30 +0.10 –0.05 0.50 +0.10 –0.05 (0.95) 6 5 4 1 32 +0.20 –0.05 10˚ 6 Tr2 Tr1 5 43 2 1 Note) The Part number in the Parenthesis shows conventional part number. |
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