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IXFJ40N30 Datasheet(PDF) 1 Page - IXYS Corporation |
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IXFJ40N30 Datasheet(HTML) 1 Page - IXYS Corporation |
1 / 2 page ![]() 1 - 2 © 2000 IXYS All rights reserved Symbol Test Conditions Maximum Ratings V DSS T J = 25 °C to 150°C 300 V V DGR T J = 25 °C to 150°C; R GS = 1 MW 300 V V GS Continuous ±20 V V GSM Transient ±30 V I D25 T C = 25 °C40 A I DM T C = 25 °C, pulse width limited by T JM 160 A I AR T C = 25 °C40 A E AR T C = 25 °C30 mJ dv/dt I S £ I DM, di/dt £ 100 A/ms, VDD £ VDSS, 5 V/ns T J £ 150°C, R G = 2 W P D T C = 25 °C 300 W T J -55 ... +150 °C T JM 150 °C T stg -55 ... +150 °C T L 1.6 mm (0.062 in.) from case for 10 s 300 °C Weight 5g Symbol Test Conditions Characteristic Values (T J = 25°C, unless otherwise specified) min. typ. max. V DSS V GS = 0 V, ID = 250 mA 300 V V GS(th) V DS = V GS, ID = 4 mA 2 4 V I GSS V GS = ±20 VDC, VDS = 0 ±100 nA I DSS V DS = 0.8 • V DSS T J = 25°C 200 mA V GS = 0 V T J = 125°C1 mA R DS(on) V GS = 10 V, ID = 0.5 ID25 80 m W Pulse test, t £ 300 ms, duty cycle d £ 2 % HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low t rr, HDMOS TM Family Preliminary data sheet Features • Low profile, high power package • Long creep and strike distances • Easy up-grade path for TO-220 designs • Low R DS (on) HDMOS TM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast intrinsic Rectifier Applications • DC-DC converters • Synchronousrectification • Battery chargers • Switched-modeandresonant-mode power supplies • DC choppers • AC motor control • Temperatureandlightingcontrols • Low voltage relays Advantages • High power, low profile package • Space savings • High power density 98536 1/99) G = Gate, D = Drain, S = Source, TAB = Drain (TAB) G D S é IXFJ 40N30 V DSS = 300 V I D25 = 40 A R DS(on) = 80 m W t rr < 200 ns IXYS reserves the right to change limits, test conditions, and dimensions. |
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