IS61LV632A

Integrated Silicon Solution, Inc. — 1-800-379-4774

5

Rev. A

04/17/01

External Address

1st Burst Address

2nd Burst Address

3rd Burst Address

A1 A0

A1 A0

A1 A0

A1 A0

00

01

10

11

01

00

11

10

10

11

00

01

11

10

01

00

0,0

1,0

0,1

A1', A0' = 1,1

Symbol

Parameter

Value

Unit

Temperature Under Bias

–10 to +85

°C

Storage Temperature

–55 to +150

°C

Power Dissipation

1.8

W

Output Current (per I/O)

100

mA

V

Voltage Relative to GND for

–0.5 to 4.6

V

for Address and Control Inputs

Notes:

1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause

permanent damage to the device. This is a stress rating only and functional operation of the

device at these or any other conditions above those indicated in the operational sections of

this specification is not implied. Exposure to absolute maximum rating conditions for extended

periods may affect reliability.

2. This device contains circuity to protect the inputs against damage due to high static voltages

or electric fields; however, precautions may be taken to avoid application of any voltage higher

than maximum rated voltages to this high-impedance circuit.

3. This device contains circuitry that will ensure the output devices are in High-Z at power up.