IS61LF12832A datasheet(13/25 Pages) ISSI

Part #	IS61LF12832A

Description	128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM

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Manufacturer	ISSI [Integrated Silicon Solution, Inc]

Direct Link	http://www.issi.com

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13 / 25 page

Integrated Silicon Solution, Inc. — 1-800-379-4774

13

Rev. 00A

08/11/05

ISSI®

IS61(64)LF12832A, IS61(64)LF12836A, IS61(64)LF25618A

IS64VF12832A, IS61(64)VF12836A, IS61(64)VF25618A

POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)

6.5

7.5

MAX

Symbol

Parameter

Test Conditions

Temp. range

x18

x32/x36

x18

x32/x36

Unit

ICC

AC Operating

Device Selected,

Com.

175

155

mA

Supply Current

OE = VIH, ZZ

≤ VIL,

Ind.

180

160

All Inputs

≤ 0.2V or ≥ VDD – 0.2V, AUTO.

190

175

Cycle Time

≥ tKC min.

typ.(2)

120

110

ISB

Standby Current

Device Deselected,

Com.

90

mA

TTL Input

VDD = Max.,

Ind.

100

All Inputs

≤ VIL or ≥ VIH,

Auto.

120

ZZ

≤ VIL, f = Max.

ISBI

Standby Current

Device Deselected,

Com.

70

mA

CMOS Input

VDD = Max.,

Ind.

75

VIN

≤ VSS + 0.2V or ≥VDD – 0.2V

Auto.

90

f = 0

typ.

40

ISB2

Sleep Mode

ZZ>VIH

Com.

30

mA

Ind.

35

Auto.

45

typ.

25

Note:

1. MODE pin has an internal pullup and should be tied to VDD or VSS. It exhibits ±100 µA maximum leakage current when tied to

≤

VSS + 0.2V or

≥ VDD – 0.2V.

2. Typical values are measured at VDD = 3.3V, TA = 25oC and not 100% tested.

CAPACITANCE(1,2)

Symbol

Parameter

Conditions

Max.

Unit

CIN

Input Capacitance

VIN = 0V

6

pF

COUT

Input/Output Capacitance

VOUT = 0V

8

pF

Notes:

1. Tested initially and after any design or process changes that may affect these parameters.

2. Test conditions: TA = 25°C, f = 1 MHz, VDD = 3.3V.

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IS61LF12832A Datasheet(PDF) 13 Page - Integrated Silicon Solution, Inc

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