BATTERY PROTECTION IC WITH ALARM FUNCTION FOR 1-CELL PACK

Rev.1.0_00

S-82T1A Series

9



Electrical Characteristics

1.

Ta =

+25°C

Table 10

(Ta =

+25°C unless otherwise specified)

Item

Symbol

Condition

Min.

Typ.

Max.

Unit

Test

Circuit

Detection Voltage

Overcharge detection voltage

VCU

Ta = 0°C to

+50°C*1

VCU

− 0.012

VCU

VCU

+ 0.012

V

1

Overcharge release voltage

VCL

VCL

≠ VCU

VCL

− 0.050

VCL

VCL

+ 0.050

V

1

VCL = VCU

VCL

− 0.017

VCL

VCL

+ 0.012

V

1

Alarm status detection voltage

VAU

Ta = 0°C to

+ 50°C*1

VAU

− 0.012

VAU

VAU

+ 0.012

V

1

Alarm hysteresis voltage

VHA

−

VHA

− 0.005

VHA

VHA

+ 0.005

V

1

Overdischarge detection voltage

VDL

−

VDL

− 0.050

VDL

VDL

+ 0.050

V

2

Overdischarge release voltage

VDU

VDL

≠ VDU

VDU

− 0.075

VDU

VDU

+ 0.075

V

2

VDL = VDU

VDU

− 0.050

VDU

VDU

+ 0.050

V

2

Discharge overcurrent 1 detection voltage

VDIOV1

−

VDIOV1

− 1.5

VDIOV1

VDIOV1

+ 1.5

mV

5

Discharge overcurrent 2 detection voltage

VDIOV2

−

VDIOV2

− 3

VDIOV2

VDIOV2

+ 3

mV

2

Load short-circuiting detection voltage

VSHORT

−

VSHORT

− 5

VSHORT

VSHORT

+ 5

mV

2

Load short-circuiting 2 detection voltage

VSHORT2

−

VDD

− 1.2

VDD

− 0.8

VDD

− 0.5

V

2

Charge overcurrent detection voltage

VCIOV

−

VCIOV

− 1.5

VCIOV

VCIOV

+ 1.5

mV

2

Discharge overcurrent release voltage

VRIOV

VDD = 3.4 V

VDD

× 0.77

VDD

× 0.80

VDD

× 0.83

V

5

0 V Battery Charge

0 V battery charge starting charger voltage

V0CHA

0 V battery charge

enabled

0.7

1.1

1.5

V

4

0 V battery charge inhibition battery voltage

V0INH

0 V battery charge

inhibited

0.9

1.2

1.5

V

2

Internal Resistance

Resistance between VDD pin and VM pin

RVMD

VDD = 1.8 V, VVM = 0 V

500

1250

2500

k

Ω

3

Resistance between VM pin and VSS pin

RVMS

VDD = 3.4 V, VVM = 1.0 V

5

10

15

k

Ω

3

Input Voltage

Operation voltage between VDD pin and

VSS pin

VDSOP1

−

1.5

−

6.0

V

−

Operation voltage between VDD pin and

VM pin

VDSOP2

−

1.5

−

28

V

−

Input Current

Current consumption during operation

IOPE

VDD = 3.4 V, VVM = 0 V

−

2.5

5.0

μA

3

Current consumption during power-down

IPDN

VDD = VVM = 1.5 V

−

−

0.05

μA

3

Current consumption during overdischarge

IOPED

VDD = VVM = 1.5 V

−

−

0.5

μA

3

Output Resistance

CO pin resistance "H"

RCOH

−

5

10

20

k

Ω

4

CO pin resistance "L"

RCOL

−

1.5

3

6

k

Ω

4

DO pin resistance "H"

RDOH

−

5

10

20

k

Ω

4

DO pin resistance "L"

RDOL

−

1

2

4

k

Ω

4

AO pin resistance "H"

RAOH

CMOS output

5

10

20

k

Ω

4

AO pin resistance "L"

RAOL

−

1

2

4

k

Ω

4

Delay Time

Overcharge detection delay time

tCU

−

tCU

× 0.7

tCU

tCU

× 1.3

−

5

Alarm status detection delay time

tAU

−

tAU

× 0.7

tAU

tAU

× 1.3

−

5

Overdischarge detection delay time

tDL

−

tDL

× 0.7

tDL

tDL

× 1.3

−

5

Discharge overcurrent 1 detection delay time tDIOV1

−

tDIOV1

× 0.75

tDIOV1

tDIOV1

× 1.25

−

5

Discharge overcurrent 2 detection delay time tDIOV2

−

tDIOV2

× 0.7

tDIOV2

tDIOV2

× 1.3

−

5

Load short-circuiting detection delay time

tSHORT

−

tSHORT

× 0.7

tSHORT

tSHORT

× 1.3

−

5

Charge overcurrent detection delay time

tCIOV

−

tCIOV

× 0.7

tCIOV

tCIOV

× 1.3

−

5

*1. Since products are not screened at high and low temperature, the specification for this temperature range is guaranteed

by design, not tested in production.