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IC41SV4105-100TG Datasheet(PDF) 2 Page - Integrated Circuit Solution Inc |
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IC41SV4105-100TG Datasheet(HTML) 2 Page - Integrated Circuit Solution Inc |
2 / 17 page IC41SV4105 2 Integrated Circuit Solution Inc. DR032-0A 10/29/2001 FEATURES • Fast Page Mode Access Cycle • TTL compatible inputs and outputs • Refresh Interval: -- 1,024 cycles/16 ms • Refresh Mode: RAS-Only, CAS-before-RAS (CBR), and Hidden • JEDEC standard pinout • Single power supply: 1.9V − − − − − 2.4V DESCRIPTION The ICSI 4105 Series is a 1,048,576 x 4-bit high-performance CMOS Dynamic Random Access Memory. The Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 4-bit word. These features make the 4105 Series ideally suited for digital signal processing, and low power portable audio applications. The 4105 Series is packaged in a 20-pin 300mil SOJ and a 20 pin TSOP-2 1M x 4 (4 −MBIT) DYNAMIC RAM WITH FAST PAGE MODE KEY TIMING PARAMETERS Parameter - 50 -70 -100 Unit RAS Access Time (tRAC) 50 70 100 ns CAS Access Time (tCAC)14 20 25 ns Column Address Access Time (tAA)25 35 50 ns Fast Page Mode Cycle Time (tPC)20 45 60 ns Read/Write Cycle Time (tRC) 90 130 180 ns ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors which may appear in this publication. © Copyright 2000, Integrated Circuit Solution Inc. PIN DESCRIPTIONS A0-A9 Address Inputs I/O0-3 Data Inputs/Outputs WE Write Enable OE Output Enable RAS Row Address Strobe CAS Column Address Strobe Vcc Power GND Ground PIN CONFIGURATION 20 (26) Pin SOJ, TSOP-2 1 2 3 4 5 9 10 11 12 13 26 25 24 23 22 18 17 16 15 14 I/O0 I/O1 WE RAS A9 A0 A1 A2 A3 VCC GND I/O3 I/O2 CAS OE A8 A7 A6 A5 A4 Preliminary |
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