HN58X2508I datasheet(25/29 Pages) RENESAS

Part #	HN58X2508I

Description	Electrically Erasable and Programmable Read Only Memory

Download	29 Pages

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Manufacturer	RENESAS [Renesas Technology Corp]

Direct Link	http://www.renesas.com

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25 / 29 page

HN58X2508I/HN58X2516I

Rev.2.00, Aug.19.2004, page 25 of 27

Notes

Data Protection at VCC On/Off

When VCC is turned on or off, noise on S inputs generated by external circuits (CPU, etc) may act as a trigger

and turn the EEPROM to unintentional program mode. To prevent this unintentional programming, this

EEPROM have a power on reset function. Be careful of the notices described below in order for the power

on reset function to operate correctly.

• S should be fixed to V

CC during VCC on/off. Low to high or high to low transition during VCC on/off

may cause the trigger for the unintentional programming.

• V

CC should be turned on/off after the EEPROM is placed in a standby state.

• V

CC should be turned on from the ground level (VSS) in order for the EEPROM not to enter the

unintentional programming mode.

• V

CC turn on speed should be slower than 10

µs/V.

• When WRSR or WRITE instruction is executed before V

CC turns off, VCC should be turned off after

waiting write cycle time (tW).

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