 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
CP624 Datasheet(PDF) 1 Page - Central Semiconductor Corp |
|
|
|||||||||||||||||||||||||||||
CP624 Datasheet(HTML) 1 Page - Central Semiconductor Corp |
|
|
1 / 2 page  145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com PRINCIPAL DEVICE TYPES 2N6028 GEOMETRY PROCESS DETAILS R3 (4- February 2004) Process PLANAR PASSIVATED Die Size 27.5 x 27.5 MILS Die Thickness 11 MILS Anode Bonding Pad Area 7.1 x 5.1 MILS Cathode Bonding Pad Area 7.1 x 5.1 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 13,000Å GROSS DIE PER 4 INCH WAFER 14,930 Central Semiconductor Corp. TM PROCESS CP624 Programmable Unijunction Transistor BACKSIDE GATE |
Similar Part No. - CP624 |
|
Similar Description - CP624 |
|
|
|
Link URL |
| Privacy Policy |
| ALLDATASHEET.COM |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
