TVS Diode Array Datasheet

© 2021 Littelfuse, Inc.

Specifications are subject to change without notice.

Revised: JC. 11/29/21

3

AQHVxx-01ETG-C

General Purpose ESD Protection

Power Derating Curve

AQHV36-C Electrical Characteristics (T

OP=25ºC)

Parameter

Symbol

Test Conditions

Min

Typ

Max

Units

Reverse Standoff Voltage

V

RWM

I

R=1μA

36.0

V

Breakdown Voltage

V

BR

I

R=1mA

40.0

V

Reverse Leakage Current

I

LEAK

V

R=36V

1.0

μA

Clamp Voltage1

V

C

I

PP=1A, tp=8/20µs, Fwd

52.0

V

I

PP=2A, tp=8/20µs, Fwd

65.0

V

Dynamic Resistance2

R

DYN

TLP, t

p=100ns, I/O to GND

1.33

Ω

Peak Pulse Current

I

pp

t

p=8/20µs

2.0

A

ESD Withstand Voltage1

V

ESD

IEC 61000-4-2 (Contact Discharge)

±15

kV

IEC 61000-4-2 (Air Discharge)

±20

kV

Diode Capacitance1

C

I/O-I/O

Reverse Bias=0V, f=1MHz

13

pF

Note:

1

Parameter is guaranteed by design and/or component characterization.

2

Transmission Line Pulse (TLP) with 100ns width, 2ns rise time, and average window t1=70ns to t2= 90ns

AQHV24-C Electrical Characteristics (T

OP=25ºC)

Parameter

Symbol

Test Conditions

Min

Typ

Max

Units

Reverse Standoff Voltage

V

RWM

I

R=1μA

24.0

V

Breakdown Voltage

V

BR

I

R=1mA

26.7

V

Reverse Leakage Current

I

LEAK

V

R=24V

1.0

μA

Clamp Voltage1

V

C

I

PP=1A, tp=8/20µs, Fwd

36.0

V

I

PP=3A, tp=8/20µs, Fwd

50.0

V

Dynamic Resistance2

R

DYN

TLP, t

p=100ns, I/O to GND

0.65

Ω

Peak Pulse Current

I

pp

t

p=8/20µs

3.0

A

ESD Withstand Voltage1

V

ESD

IEC 61000-4-2 (Contact Discharge)

±24

kV

IEC 61000-4-2 (Air Discharge)

±30

kV

Diode Capacitance1

C

I/O-I/O

Reverse Bias=0V, f=1MHz

17

pF

0

90

80

70

60

50

40

30

20

10

100

110

0

150

125

100

75

50

25

Ambient Temperature - T

A (

o

C)