TVS Diode Array Datasheet

© 2021 Littelfuse, Inc.

Specifications are subject to change without notice.

Revised: JC. 11/29/21

2

AQHVxx-01ETG-C

General Purpose ESD Protection

Caution: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the component. This is a stress only rating and operation of the component at these or any other conditions above those

indicated in the operational sections of this specification is not implied.

Absolute Maximum Ratings

Symbol

Parameter

Value

Units

P

pk

Peak Pulse Power (t

p=8/20μs)

200

W

T

OP

Operating Temperature

-40 to 150

°C

T

STOR

Storage Temperature

-55 to 150

°C

AQHV12-C Electrical Characteristics (T

OP=25ºC)

Parameter

Symbol

Test Conditions

Min

Typ

Max

Units

Reverse Standoff Voltage

V

RWM

I

R=1μA

12.0

V

Breakdown Voltage

V

BR

I

R=1mA

13.3

V

Reverse Leakage Current

I

LEAK

V

R=12V

1.0

μA

Clamp Voltage1

V

C

I

PP=1A, tp=8/20µs, Fwd

19.0

V

I

PP=8A, tP=8/20μs, Fwd

25.0

V

Dynamic Resistance2

R

DYN

TLP, t

p=100ns, I/O to GND

0.48

Ω

Peak Pulse Current

I

pp

t

p=8/20µs

8.0

A

ESD Withstand Voltage1

V

ESD

IEC 61000-4-2 (Contact Discharge)

±30

kV

IEC 61000-4-2 (Air Discharge)

±30

kV

Diode Capacitance1

C

I/O-I/O

Reverse Bias=0V, f=1MHz

30

pF

AQHV15-C Electrical Characteristics (T

OP=25ºC)

Parameter

Symbol

Test Conditions

Min

Typ

Max

Units

Reverse Standoff Voltage

V

RWM

I

R=1μA

15.0

V

Breakdown Voltage

V

BR

I

R=1mA

16.7

V

Reverse Leakage Current

I

LEAK

V

R=15V

1.0

μA

Clamp Voltage1

V

C

I

PP=1A, tp=8/20µs, Fwd

22.0

V

I

PP=5A, tp=8/20µs, Fwd

30.0

V

Dynamic Resistance2

R

DYN

TLP, t

p=100ns, I/O to GND

0.43

Ω

Peak Pulse Current

I

pp

t

p=8/20µs

5.0

A

ESD Withstand Voltage1

V

ESD

IEC 61000-4-2 (Contact Discharge)

±30

kV

IEC 61000-4-2 (Air Discharge)

±30

kV

Diode Capacitance1

C

I/O-I/O

Reverse Bias=0V, f=1MHz

24

pF