General Purpose ESD Protection - AQHVxx-01ETG series

TVS Diode Array (SPA® Diodes)

©2018 Littelfuse, Inc.

Specifications are subject to change without notice.

Revision: 10/15/18

AQHV24 Electrical Characteristics (T

OP=25ºC)

Parameter

Symbol

Test Conditions

Min

Typ

Max

Units

Reverse Standoff Voltage

V

RWM

I

R≤1μA

24.0

V

Breakdown Voltage

V

BR

I

R=1mA

26.7

V

Leakage Current

I

LEAK

V

R=24V

1.0

μA

Clamp Voltage1

V

C

I

PP=1A, tp=8/20µs, Fwd

36.0

V

I

PP=3A, tp=8/20µs, Fwd

50.0

V

Dynamic Resistance2

R

DYN

TLP, t

p=100ns, I/O to GND

0.56

Ω

Peak Pulse Current

I

pp

t

p=8/20µs

3.0

A

ESD Withstand Voltage1

V

ESD

IEC 61000-4-2 (Contact Discharge)

±24

kV

IEC 61000-4-2 (Air Discharge)

±30

kV

Diode Capacitance1

C

I/O-GND

Reverse Bias=0V, f=1MHz

32

pF

AQHV36 Electrical Characteristics (T

OP=25ºC)

Parameter

Symbol

Test Conditions

Min

Typ

Max

Units

Reverse Standoff Voltage

V

RWM

I

R≤1μA

36.0

V

Breakdown Voltage

V

BR

I

R=1mA

40.0

V

Leakage Current

I

LEAK

V

R=36V

1.0

μA

Clamp Voltage1

V

C

I

PP=1A, tp=8/20µs, Fwd

52.0

V

I

PP=2A, tp=8/20µs, Fwd

60.0

V

Dynamic Resistance2

R

DYN

TLP, t

p=100ns, I/O to GND

1.28

Ω

Peak Pulse Current

I

pp

t

p=8/20µs

2.0

A

ESD Withstand Voltage1

V

ESD

IEC 61000-4-2 (Contact Discharge)

±15

kV

IEC 61000-4-2 (Air Discharge)

±20

kV

Diode Capacitance1

C

I/O-GND

Reverse Bias=0V, f=1MHz

25

pF

Non-Repetitive Peak Pulse Power vs. Pulse Time

Pulse Duration - tp(µs)

0.01

0.1

1

10

0.11

10

100

1000

Power Derating Curve

0

10

20

30

40

50

60

70

80

90

100

110

0255075100

125150

Ambient Temperature - TA (

oC)

Note:

1 Parameter is guaranteed by design and/or component characterization.

2 Transmission Line Pulse (TLP) with 100ns width, 2ns rise time, and average window t1=70ns to t2= 90ns