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AQHV12-01ETG Datasheet(PDF) 3 Page - Littelfuse |
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AQHV12-01ETG Datasheet(HTML) 3 Page - Littelfuse |
3 / 6 page General Purpose ESD Protection - AQHVxx-01ETG series TVS Diode Array (SPA® Diodes) ©2018 Littelfuse, Inc. Specifications are subject to change without notice. Revision: 10/15/18 AQHV24 Electrical Characteristics (T OP=25ºC) Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage V RWM I R≤1μA 24.0 V Breakdown Voltage V BR I R=1mA 26.7 V Leakage Current I LEAK V R=24V 1.0 μA Clamp Voltage1 V C I PP=1A, tp=8/20µs, Fwd 36.0 V I PP=3A, tp=8/20µs, Fwd 50.0 V Dynamic Resistance2 R DYN TLP, t p=100ns, I/O to GND 0.56 Ω Peak Pulse Current I pp t p=8/20µs 3.0 A ESD Withstand Voltage1 V ESD IEC 61000-4-2 (Contact Discharge) ±24 kV IEC 61000-4-2 (Air Discharge) ±30 kV Diode Capacitance1 C I/O-GND Reverse Bias=0V, f=1MHz 32 pF AQHV36 Electrical Characteristics (T OP=25ºC) Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage V RWM I R≤1μA 36.0 V Breakdown Voltage V BR I R=1mA 40.0 V Leakage Current I LEAK V R=36V 1.0 μA Clamp Voltage1 V C I PP=1A, tp=8/20µs, Fwd 52.0 V I PP=2A, tp=8/20µs, Fwd 60.0 V Dynamic Resistance2 R DYN TLP, t p=100ns, I/O to GND 1.28 Ω Peak Pulse Current I pp t p=8/20µs 2.0 A ESD Withstand Voltage1 V ESD IEC 61000-4-2 (Contact Discharge) ±15 kV IEC 61000-4-2 (Air Discharge) ±20 kV Diode Capacitance1 C I/O-GND Reverse Bias=0V, f=1MHz 25 pF Non-Repetitive Peak Pulse Power vs. Pulse Time Pulse Duration - tp(µs) 0.01 0.1 1 10 0.11 10 100 1000 Power Derating Curve 0 10 20 30 40 50 60 70 80 90 100 110 0255075100 125150 Ambient Temperature - TA ( oC) Note: 1 Parameter is guaranteed by design and/or component characterization. 2 Transmission Line Pulse (TLP) with 100ns width, 2ns rise time, and average window t1=70ns to t2= 90ns |
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