General Purpose ESD Protection - AQHVxx-01ETG series

TVS Diode Array (SPA® Diodes)

©2018 Littelfuse, Inc.

Specifications are subject to change without notice.

Revision: 10/15/18

Notes:

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the component. This is a stress only rating and

operation of the component at these or any other conditions above those indicated in the operational sections of this specification is not implied.

Absolute Maximum Ratings

Symbol

Parameter

Value

Units

P

pk

Peak Pulse Power (t

p=8/20μs)

200

W

T

OP

Operating Temperature

-40 to 150

°C

T

STOR

Storage Temperature

-55 to 150

°C

AQHV12 Electrical Characteristics (T

OP=25ºC)

Parameter

Symbol

Test Conditions

Min

Typ

Max

Units

Reverse Standoff Voltage

V

RWM

I

R≤1μA

12.0

V

Breakdown Voltage

V

BR

I

R=1mA

13.3

V

Leakage Current

I

LEAK

V

R=12V

1.0

μA

Clamp Voltage1

V

C

I

PP=1A, tp=8/20µs, Fwd

19.0

V

I

PP=8A, tP=8/20μs, Fwd

25.0

V

Dynamic Resistance2

R

DYN

TLP, t

p=100ns, I/O to GND

0.37

Ω

Peak Pulse Current

I

pp

t

p=8/20µs

8.0

A

ESD Withstand Voltage1

V

ESD

IEC 61000-4-2 (Contact Discharge)

±30

kV

IEC 61000-4-2 (Air Discharge)

±30

kV

Diode Capacitance1

C

D-GND

Reverse Bias=0V, f=1MHz

60

pF

AQHV15 Electrical Characteristics (T

OP=25ºC)

Parameter

Symbol

Test Conditions

Min

Typ

Max

Units

Reverse Standoff Voltage

V

RWM

I

R≤1μA

15.0

V

Breakdown Voltage

V

BR

I

R=1mA

16.7

V

Leakage Current

I

LEAK

V

R=15V

1.0

μA

Clamp Voltage1

V

C

I

PP=1A, tp=8/20µs, Fwd

22.0

V

I

PP=5A, tp=8/20µs, Fwd

28.0

V

Dynamic Resistance2

R

DYN

TLP, t

p=100ns, I/O to GND

0.40

Ω

Peak Pulse Current

I

pp

t

p=8/20µs

5.0

A

ESD Withstand Voltage1

V

ESD

IEC 61000-4-2 (Contact Discharge)

±30

kV

IEC 61000-4-2 (Air Discharge)

±30

kV

Diode Capacitance1

C

I/O-GND

Reverse Bias=0V, f=1MHz

46

pF