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AP4569GD Datasheet(PDF) 5 Page - Advanced Power Electronics Corp. |
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AP4569GD Datasheet(HTML) 5 Page - Advanced Power Electronics Corp. |
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5 / 7 page  AP4569GD N-Channel Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 5/7 Q VG 4.5V QGS QGD QG Charge 0 4 8 12 0369 12 Q G , Total Gate Charge (nC) I D =4 A V DS =30 V 10 100 1000 1 5 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) f=1.0MHz C iss C oss C rss 0.01 0.1 1 10 100 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) T A =25 o C Single Pulse 1ms 10ms 100ms 1s 10s DC 0 5 10 15 20 02 46 V GS , Gate-to-Source Voltage (V) T j =150 o C T j =25 o C V DS =5V 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja = 90℃ ℃ ℃ ℃/W t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse |
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