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AP4569GD Datasheet(PDF) 4 Page - Advanced Power Electronics Corp. |
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AP4569GD Datasheet(HTML) 4 Page - Advanced Power Electronics Corp. |
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4 / 7 page  N-Channel Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 4/7 AP4569GD 0 10 20 30 0246 V DS , Drain-to-Source Voltage (V) T A =25 o C 10V 7.0V 5.0V 4.5V V G =3.0V 0 10 20 30 02 46 V DS , Drain-to-Source Voltage (V) T A = 150 o C 10V 7.0V 5.0V 4.5V V G =3.0V 25 55 85 115 145 24 68 10 V GS , Gate-to-Source Voltage (V) I D =2A T A =25 o C 0.6 1.0 1.4 1.8 -50 0 50 100 150 T j , Junction Temperature ( o C) I D =4A V G =10V 0 2 4 6 0 0.2 0.4 0.6 0.8 1 1.2 V SD , Source-to-Drain Voltage (V) T j =25 o C T j =150 o C 0.3 0.7 1.1 1.5 -50 0 50 100 150 T j , Junction Temperature ( o C) |
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