AP4511GD

Symbol

Parameter

Test Conditions

Min.

Typ.

Max. Units

Drain-Source Breakdown Voltage

-35

-

-

V

ΔBV

Breakdown Voltage Temperature Coefficient

-

-0.02

-

V/℃

Static Drain-Source On-Resistance

2

-

35

40

mΩ

-

53

60

mΩ

Gate Threshold Voltage

-1

-

-3

V

Forward Transconductance

-

9

-

S

Drain-Source Leakage Current

-

-

-1

uA

-

-

-25

uA

Gate-Source Leakage

-

-

±100

nA

Total Gate Charge

2

-

10

16

nC

Gate-Source Charge

-

2

-

nC

Gate-Drain ("Miller") Charge

-

6

-

nC

Turn-on Delay Time

2

-

10

-

ns

Rise Time

-

6

-

ns

Turn-off Delay Time

-

26

-

ns

Fall Time

-7

-

ns

Input Capacitance

-

690

1100

pF

Output Capacitance

-

165

-

pF

Reverse Transfer Capacitance

f=1.0MHz

-

130

-

pF

Gate Resistance

f=1.0MHz

-

5.2

7.8

Ω

Source-Drain Diode

Symbol

Parameter

Test Conditions

Min.

Typ.

Max. Units

Forward On Voltage

2

-

-

-1.2

V

Reverse Recovery Time

2

-

20

-

ns

Reverse Recovery Charge

dI/dt=-100A/µs

-

12

-

nC

Notes:

1.Pulse width limited by Max. junction temperature.

2.Pulse test

3.Surface mounted on 1 in

THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.

USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.

APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED

HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE

RELIABILITY, FUNCTION OR DESIGN.

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