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AP4511GD Datasheet(PDF) 1 Page - Advanced Power Electronics Corp. |
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AP4511GD Datasheet(HTML) 1 Page - Advanced Power Electronics Corp. |
1 / 8 page ![]() Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET ▼ Low Gate Charge N-CH BVDSS 35V ▼ Fast Switching Speed RDS(ON) 25mΩ ▼ PDIP-8 Package ID 7A P-CH BVDSS -35V RDS(ON) 40mΩ Description ID -6.1A Absolute Maximum Ratings Symbol Parameter Rating Units N-channel P-channel VDS Drain-Source Voltage 35 -35 V VGS Gate-Source Voltage ±20 ±20 V ID@TA=25℃ Continuous Drain Current 3 7 -6.1 A ID@TA=70℃ Continuous Drain Current 3 5.7 -5 A IDM Pulsed Drain Current 1 30 -30 A PD@TA=25℃ Total Power Dissipation 2.0 W Linear Derating Factor 0.016 W/℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Symbol Value Unit Rthj-a Maximum Thermal Resistance, Junction-ambient 3 62.5 ℃/W Data and specifications subject to change without notice Parameter 1 Thermal Data AP4511GD RoHS-compliant Product G2 D2 S2 G1 D1 S1 D1 D1 D2 D2 S1 G1 S2 G2 PDIP-8 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. 200805262 |
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