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AP4511GD Datasheet(PDF) 7 Page - Advanced Power Electronics Corp. |
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AP4511GD Datasheet(HTML) 7 Page - Advanced Power Electronics Corp. |
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7 / 8 page  AP4511GD P-Channel Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 7 0 4 8 12 16 0 5 10 15 20 25 Q G , Total Gate Charge (nC) I D =-6 A V DS = - 28V 100 1000 10000 1 5 9 13 17 21 25 29 -V DS , Drain-to-Source Voltage (V) f=1.0MHz C iss C oss C rss 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 t , Pulse Width (s) PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=90 oC/W t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 0.01 0.1 1 10 100 0.1 1 10 100 -V DS , Drain-to-Source Voltage (V) T c =25 o C Single Pulse 100us 1ms 10ms 100ms 1s DC 0 10 20 30 0246 -V GS , Gate-to-Source Voltage (V) T j =150 o C T j =25 o C V DS =-5V Q VG -4.5V QGS QGD QG Charge |
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