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AP4501GSD Datasheet(PDF) 3 Page - Advanced Power Electronics Corp. |
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AP4501GSD Datasheet(HTML) 3 Page - Advanced Power Electronics Corp. |
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3 / 7 page  AP4501GSD P-CH Electrical Characteristics@Tj=25 oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -30 - - V ΔBV DSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA - -0.03 - V/℃ RDS(ON) Static Drain-Source On-Resistance 2 VGS=-10V, ID=-5A - - 49 mΩ VGS=-4.5V, ID=-3A - - 75 mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1 - -3 V gfs Forward Transconductance VDS=-10V, ID=-5.3A - 8 - S IDSS Drain-Source Leakage Current ( Tj=25 oC) VDS=-30V, VGS=0V - - -1 uA Drain-Source Leakage Current ( Tj=70 oC) VDS=-24V, VGS=0V - - -25 uA IGSS Gate-Source Leakage VGS=- - nA Qg Total Gate Charge 2 ID=-5A - 9 15 nC Qgs Gate-Source Charge VDS=-24V - 2 - nC Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 5 - nC td(on) Turn-on Delay Time 2 VDS=-15V - 10 - ns tr Rise Time ID=-1A - 7 - ns td(off) Turn-off Delay Time RG=6Ω,VGS=-10V - 27 - ns tf Fall Time RD=15Ω -16 - ns Ciss Input Capacitance VGS=0V - 460 730 pF Coss Output Capacitance VDS=-25V - 180 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 130 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage 2 IS=-1.7A, VGS=0V - - -1.2 V trr Reverse Recovery Time 2 IS=-5A, VGS=0V, - 21 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 18 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Mounted on 1 in 2 copper pad of FR4 board ; 90℃/W when mounted on Min. copper pad. ± 20V ±100 ± 20V ±100 ± 20V |
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