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AP4501GSD Datasheet(PDF) 1 Page - Advanced Power Electronics Corp. |
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AP4501GSD Datasheet(HTML) 1 Page - Advanced Power Electronics Corp. |
1 / 7 page Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET ▼ ▼ ▼ ▼ Simple Drive Requirement N-CH BVDSS 30V ▼ ▼ ▼ ▼ Low On-resistance RDS(ON) 27mΩ ▼ ▼ ▼ ▼ Fast Switching Characteristic ID 7A P-CH BVDSS -30V RDS(ON) 49mΩ Description ID -5A Absolute Maximum Ratings Symbol Parameter Rating Units N-channel P-channel VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage ±20 V ID@TA=25℃ Continuous Drain Current 3 -5 A ID@TA=70℃ Continuous Drain Current 3 -4.2 A IDM Pulsed Drain Current 1 -30 A PD@TA=25℃ Total Power Dissipation W Linear Derating Factor W/℃ TSTG Storage Temperature Range ℃ TJ Operating Junction Temperature Range ℃ Symbol Value Unit Rthj-a Thermal Resistance Junction-ambient 3 Max. 62.5 ℃/W Data and specifications subject to change without notice Pb Free Plating Product Parameter 200504042 40 2 AP4501GSD Thermal Data 30 ±20 7 -55 to 150 0.016 -55 to 150 5.8 The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost- effectiveness. D1 D1 D2 D2 S1 G1 S2 G2 PDIP-8 G2 D2 S2 G1 D1 S1 |
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