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AP4501GSD Datasheet(PDF) 4 Page - Advanced Power Electronics Corp. |
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AP4501GSD Datasheet(HTML) 4 Page - Advanced Power Electronics Corp. |
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4 / 7 page  N-Channel Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature AP4501GSD 0 10 20 30 40 01 23 4 V DS , Drain-to-Source Voltage (V) T A =25 o C 10V 8.0V 6.0V 5.0V V G =4. 0 V 0.2 0.8 1.4 2 -50 0 50 100 150 T j , Junction Temperature ( o C) I D =7A V G = 10V 10 40 70 100 258 11 V GS , Gate-to-Source Voltage (V) I D =7A T A =25 ℃ ℃ ℃ ℃ 0 12 24 36 0235 V DS , Drain-to-Source Voltage (V) T A =150 o C 10V 8.0V 6.0V 5.0V V G =4.0V 0.01 0.1 1 10 0 0.4 0.8 1.2 V SD , Source-to-Drain Voltage (V) T J =150 o C T J =25 o C 0 0.5 1 1.5 2 2.5 3 -50 0 50 100 150 T j , Junction Temperature ( o C ) |
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