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AP2530GY Datasheet(PDF) 3 Page - Advanced Power Electronics Corp. |
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AP2530GY Datasheet(HTML) 3 Page - Advanced Power Electronics Corp. |
3 / 7 page ![]() AP2530GY P-CH Electrical Characteristics@Tj=25 oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -30 - - V ΔBV DSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA - 0.03 - V/℃ RDS(ON) Static Drain-Source On-Resistance VGS=-10V, ID=-2A - - 150 mΩ VGS=-4.5V, ID=-1A - - 280 mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1 - -3 V gfs Forward Transconductance VDS=-5V, ID=-2A - 2 - S IDSS Drain-Source Leakage Current (Tj=25 oC) VDS=-30V, VGS=0V - - -1 uA Drain-Source Leakage Current (Tj=70 oC) VDS=-24V ,VGS=0V - - -25 uA IGSS Gate-Source Leakage VGS=±20V - - ±100 nA Qg Total Gate Charge 2 ID=-2A - 3 5 nC Qgs Gate-Source Charge VDS=-25V - 1 - nC Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 2 - nC td(on) Turn-on Delay Time 2 VDS=-15V - 6 - ns tr Rise Time ID=-1A - 8 - ns td(off) Turn-off Delay Time RG=3.3Ω,VGS=-5V - 17 - ns tf Fall Time RD=15Ω -4 - ns Ciss Input Capacitance VGS=0V - 150 240 pF Coss Output Capacitance VDS=-25V - 50 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 40 - pF Rg Gate Resistance f=1.0MHz - 8 12 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Unit VSD Forward On Voltage 2 IS=-0.9A, VGS=0V - - -1.3 V trr Reverse Recovery Time IS=2A, VGS=0V, - 15 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 7 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in 2 copper pad of FR4 board, t<5sec ; 180℃/W when mounted on min. copper pad. 3/7 |
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