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AP2530GY Datasheet(PDF) 2 Page - Advanced Power Electronics Corp. |
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AP2530GY Datasheet(HTML) 2 Page - Advanced Power Electronics Corp. |
2 / 7 page N-CH Electrical Characteristics@Tj=25 oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 30 - - V ΔBV DSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.02 - V/℃ RDS(ON) Static Drain-Source On-Resistance 2 VGS=10V, ID=3A - - 72 mΩ VGS=4.5V, ID=2A - - 125 mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance VDS=5V, ID=3A - 4 - S IDSS Drain-Source Leakage Current (Tj=25 oC) VDS=30V, VGS=0V - - 1 uA Drain-Source Leakage Current (Tj=70 oC) VDS=24V, VGS=0V - - 25 uA IGSS Gate-Source Leakage VGS=±20V - - ±100 nA Qg Total Gate Charge 2 ID=3A - 3 5 nC Qgs Gate-Source Charge VDS=25V - 1 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 2 - nC td(on) Turn-on Delay Time 2 VDS=15V - 6 - ns tr Rise Time ID=1A - 8 - ns td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 11 - ns tf Fall Time RD=15Ω -2 - ns Ciss Input Capacitance VGS=0V - 170 270 pF Coss Output Capacitance VDS=25V - 50 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 35 - pF Rg Gate Resistance f=1.0MHz - 0.5 0.8 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage 2 IS=0.9A, VGS=0V - - 1.3 V trr Reverse Recovery Time IS=3A, VGS=0V - 14 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 7 - nC 2/7 AP2530GY |
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