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AP2530GY Datasheet(PDF) 2 Page - Advanced Power Electronics Corp.

Part # AP2530GY
Description  N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
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Manufacturer  A-POWER [Advanced Power Electronics Corp.]
Direct Link  http://www.a-power.com.tw
Logo A-POWER - Advanced Power Electronics Corp.

AP2530GY Datasheet(HTML) 2 Page - Advanced Power Electronics Corp.

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N-CH Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
30
-
-
V
ΔBV
DSS/ΔTj
Breakdown Voltage Temperature Coefficient
Reference to 25℃, ID=1mA
-
0.02
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=10V, ID=3A
-
-
72
VGS=4.5V, ID=2A
-
-
125
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=5V, ID=3A
-
4
-
S
IDSS
Drain-Source Leakage Current (Tj=25
oC)
VDS=30V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (Tj=70
oC)
VDS=24V, VGS=0V
-
-
25
uA
IGSS
Gate-Source Leakage
VGS=±20V
-
-
±100
nA
Qg
Total Gate Charge
2
ID=3A
-
3
5
nC
Qgs
Gate-Source Charge
VDS=25V
-
1
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
2
-
nC
td(on)
Turn-on Delay Time
2
VDS=15V
-
6
-
ns
tr
Rise Time
ID=1A
-
8
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
11
-
ns
tf
Fall Time
RD=15Ω
-2
-
ns
Ciss
Input Capacitance
VGS=0V
-
170
270
pF
Coss
Output Capacitance
VDS=25V
-
50
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
35
-
pF
Rg
Gate Resistance
f=1.0MHz
-
0.5
0.8
Ω
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
VSD
Forward On Voltage
2
IS=0.9A, VGS=0V
-
-
1.3
V
trr
Reverse Recovery Time
IS=3A, VGS=0V
-
14
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
7
-
nC
2/7
AP2530GY


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