Advanced Power

N AND P-CHANNEL ENHANCEMENT

Electronics Corp.

MODE POWER MOSFET

▼ Low Gate Charge

30V

▼ Low On-resistance

72mΩ

▼ Surface Mount Package

3.3A

▼ RoHS Compliant

P-CH

-30V

150mΩ

Description

-2.3A

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

N-channel

P-channel

Drain-Source Voltage

30

-30

V

Gate-Source Voltage

±20

±20

V

Continuous Drain Current

3

3.3

-2.3

A

Continuous Drain Current

3

2.6

-1.8

A

Pulsed Drain Current

1

10

-10

A

Total Power Dissipation

1.14

W

Linear Derating Factor

0.01

W/℃

Storage Temperature Range

-55 to 150

℃

Operating Junction Temperature Range

-55 to 150

℃

Thermal Data

Symbol

Value

Unit

Rthj-a

Thermal Resistance Junction-ambient

3

Max.

110

℃/W

Data and specifications subject to change without notice

Parameter

200425051-1/7

AP2530GY

Pb Free Plating Product

G2

D2

S2

G1

D1

S1

D1

S1

G1

S2

G2

D2

SOT-26

Advanced Power MOSFETs utilized advanced processing

techniques to achieve the lowest possible on-resistance, extremely

efficient and cost-effectiveness device.

The SOT-26 package is universally used for all commercial-industrial

applications.