AP2530GY datasheet(4/7 Pages) A-POWER

Part #	AP2530GY

Description	N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Manufacturer	A-POWER [Advanced Power Electronics Corp.]

Direct Link	http://www.a-power.com.tw

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4 / 7 page

N-Channel

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

Fig 3. On-Resistance v.s. Gate Voltage

Fig 4. Normalized On-Resistance

v.s. Junction Temperature

Fig 5. Forward Characteristic of

Fig 6. Gate Threshold Voltage v.s.

Reverse Diode

Junction Temperature

4/7

AP2530GY

0

2

4

6

8

10

01

23

4

V DS , Drain-to-Source Voltage (V)

T A =25

o C

10 V

7.0 V

5.0 V

4.5 V

V G = 3.0 V

0

2

4

6

8

10

01234

V DS , Drain-to-Source Voltage (V)

T A = 150

o C

V G = 3.0 V

10 V

7.0 V

5.0 V

4.5 V

0.6

1.0

1.4

1.8

-50

0

50

100

150

T j , Junction Temperature (

o C)

I D =3A

V G =10V

0

1

2

3

0

0.2

0.4

0.6

0.8

1

1.2

V SD , Source-to-Drain Voltage (V)

T j =25

o C

T j =150

o C

50

90

130

170

24

68

10

V GS , Gate-to-Source Voltage (V)

I D =2 A

T A =25

o C

0.4

0.8

1.2

1.6

-50

0

50

100

150

T j , Junction Temperature (

o C)

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AP2530GY Datasheet(PDF) 4 Page - Advanced Power Electronics Corp.

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