STP180N4F6 datasheet(4/13 Pages) STMICROELECTRONICS

Part #	STP180N4F6

Description	N-channel 40 V, 2.1 mΩ typ., 120 A STripFET™ F6 Power MOSFET in a TO-220 package

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Electrical characteristics

STP180N4F6

4/13

DocID028221 Rev 2

2

Electrical characteristics

(Tcase = 25 °C unless otherwise specified)

Table 4: Static

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

VGS = 0 V, ID = 250 µA

40

V

IDSS

Zero gate voltage drain

current

VGS = 0 V, VDS = 40 V

1

µA

VGS = 0 V, VDS = 40 V,

Tcase = 125 °C(1)

100

IGSS

Gate-body leakage

current

VDS = 0 V, VGS = ±20 V

±100

nA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

3

4.5

V

RDS(on)

Static drain-source on-

resistance

VGS = 10 V, ID = 60 A

2.1

2.7

mΩ

Notes:

(1)Defined by design, not subject to production test.

Table 5: Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 25 V, f = 1 MHz, VGS = 0 V

-

7735

-

pF

Coss

Output capacitance

-

745

-

Crss

Reverse transfer

capacitance

-

560

-

Qg

Total gate charge

VDD = 20 V, ID = 120 A,

VGS = 10 V (see Figure 14: "Test

circuit for gate charge behavior")

-

130

-

nC

Qgs

Gate-source charge

-

36

-

Qgd

Gate-drain charge

-

42

-

Table 6: Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 20 V, ID = 60 A RG = 4.7

Ω,

VGS = 10 V (see Figure 13: "Test

circuit for resistive load switching

times" and Figure 18: "Switching

time waveform")

-

24

-

ns

tr

Rise time

-

150

-

td(off)

Turn-off delay time

-

106

-

tf

Fall time

-

57

-

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