STP180N4F6 datasheet(3/13 Pages) STMICROELECTRONICS

Part #	STP180N4F6

Description	N-channel 40 V, 2.1 mΩ typ., 120 A STripFET™ F6 Power MOSFET in a TO-220 package

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STP180N4F6

Electrical ratings

DocID028221 Rev 2

3/13

1

Electrical ratings

Table 2: Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage

40

V

VGS

Gate-source voltage

±20

V

ID(1)

Drain current (continuous) at Tcase = 25 °C

120

A

Drain current (continuous) at Tcase = 100 °C

120

IDM(1)(2)

Drain current (pulsed)

480

A

PTOT

Total dissipation at Tcase = 25 °C

190

W

Tstg

Storage temperature range

-55 to 175

°C

Tj

Operating junction temperature range

Notes:

(1) Limited by package.

(2)Pulse width limited by safe operating area.

Table 3: Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case

0.78

°C/W

Rthj-amb

Thermal resistance junction-amb

62.5

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