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STP180N4F6 Datasheet(PDF) 1 Page - STMicroelectronics |
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STP180N4F6 Datasheet(HTML) 1 Page - STMicroelectronics |
1 / 13 page October 2016 DocID028221 Rev 2 1/13 This is information on a product in full production. www.st.com STP180N4F6 N- channel 40 V, 2.1 mΩ typ., 120 A STripFET™ F6 Power MOSFET in a TO-220 package Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS RDS(on) max. ID PTOT STP180N4F6 40 V 2.7 mΩ 120 A 190 W Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Applications Switching applications Power tools Description This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Table 1: Device summary Order code Marking Package Packing STP180N4F6 180N4F6 TO-220 Tube |
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