STP180N4F6

Electrical characteristics

DocID028221 Rev 2

5/13

Table 7: Source-drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD(1)

Source-drain current

-

120

A

ISDM(2)

Source-drain current

(pulsed)

-

480

A

VSD(2)

Forward on voltage

VGS = 0 V, ISD = 120 A

-

1.3

V

trr

Reverse recovery time

ISD = 120 A, di/dt = 100 A/µs,

VDD = 32 V (see Figure 15: "Test

circuit for inductive load

switching and diode recovery

times")

-

36

ns

Qrr

Reverse recovery

charge

-

40

nC

IRRM

Reverse recovery

current

-

2.3

A

Notes:

(1) Limited by package.

(2) Pulse test: pulse duration = 300 µs, duty cycle 1.5%.