STP110N7F6 datasheet(4/13 Pages) STMICROELECTRONICS

Part #	STP110N7F6

Description	N-channel 68 V, 0.0055 Ω typ., 110 A, STripFET™ F6 Power MOSFET in a TO-220 package

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Electrical characteristics

STP110N7F6

4/13

DocID026836 Rev 3

2

Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 4. On/off-states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

VGS = 0, ID = 1 mA

68

V

IDSS

Zero gate voltage

drain current

VGS = 0, VDS = 68 V

1

µA

VGS = 0,

VDS = 68 V, TC = 125 °C

(1)

1.

Defined by design, not subject to production test.

100

µA

IGSS

Gate-body leakage

current

VDS = 0, VGS = +20 V

100

nA

VGS(th)

Gate threshold voltage VDS = VGS, ID = 250 µA

2

4

V

RDS(on)

Static drain-source on-

resistance

VGS = 10 V, ID = 55 A

0.0055 0.0065

Ω

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 25 V, f = 1 MHz,

VGS = 0

-

5850

-

pF

Coss

Output capacitance

340

pF

Crss

Reverse transfer

capacitance

240

pF

Qg

Total gate charge

VDD = 34 V, ID = 110 A,

VGS = 10 V

(see Figure 14)

100

nC

Qgs

Gate-source charge

32

nC

Qgd

Gate-drain charge

19

nC

Table 6. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 34 V, ID = 55 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 13)

-

23

-

ns

tr

Rise time

29

ns

td(off)

Turn-off delay time

103

ns

tf

Fall time

23

ns

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