STP110N7F6 datasheet(3/13 Pages) STMICROELECTRONICS

Part #	STP110N7F6

Description	N-channel 68 V, 0.0055 Ω typ., 110 A, STripFET™ F6 Power MOSFET in a TO-220 package

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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DocID026836 Rev 3

3/13

STP110N7F6

Electrical ratings

13

1

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage

68

V

VGS

Gate- source voltage

±20

V

ID

Drain current (continuous) at TC = 25 °C

110

A

Drain current (continuous) at TC = 100 °C

80

A

IDM

(1)

1.

Pulse width is limited by safe operating area

Drain current (pulsed) TC = 25 °C

440

A

PTOT

Total dissipation at TC = 25 °C

176

W

EAS

(2)

2.

Starting TJ = 25 °C, ID = 35 A, VDD = 50 V

Single pulse avalanche energy

185

mJ

TJ

Operating junction temperature range

-55 to 175

°C

Tstg

Storage temperature range

°C

Table 3. Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case max.

0.85

°C/W

Rthj-amb

Thermal resistance junction-ambient max.

62.5

°C/W

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