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STP110N7F6 Datasheet(PDF) 7 Page - STMicroelectronics |
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STP110N7F6 Datasheet(HTML) 7 Page - STMicroelectronics |
7 / 13 page DocID026836 Rev 3 7/13 STP110N7F6 Electrical characteristics 13 Figure 8. Capacitance variations Figure 9. Normalized V(BR)DSS vs temperature C 3000 2000 1000 0 0 40 VDS(V) (pF) 20 60 Ciss Coss Crss 4000 5000 6000 7000 AM15425v1 V(BR)DSS -75 -25 TJ(°C) (norm) -50 50 0 25 75 0.8 0.85 0.9 0.95 1 1.05 ID = 1mA 100125150 1.1 AM15428v1 Figure 10. Normalized gate threshold voltage vs temperature Figure 11. Normalized on-resistance vs temperature VGS(th) 0.6 0.4 0.2 0 -75 -25 TJ(°C) (norm) -50 0.8 50 0 25 75 100 1 ID=250 µA 125150 1.2 175 AM15426v1 RDS(on) 1.5 1 0.5 0 TJ(°C) 2 VGS=10V (norm) -75 -25 -50 50 0 25 75 100 125 150 AM15424v1 Figure 12. Source-drain diode forward characteristics |
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