STP110N7F6 datasheet(5/13 Pages) STMICROELECTRONICS

Part #	STP110N7F6

Description	N-channel 68 V, 0.0055 Ω typ., 110 A, STripFET™ F6 Power MOSFET in a TO-220 package

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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DocID026836 Rev 3

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STP110N7F6

Electrical characteristics

13

Table 7. Source-drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

VSD

(1)

1.

Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Forward on voltage

ISD = 110 A, VGS = 0

-

1.2

V

trr

Reverse recovery time

ISD = 110 A, di/dt = 100 A/µs

VDD = 54 V, (see Figure 15)

31

ns

Qrr

Reverse recovery charge

39

nC

IRRM

Reverse recovery current

2.6

A

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