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RGT50NS65D Datasheet(PDF) 3 Page - Rohm |
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RGT50NS65D Datasheet(HTML) 3 Page - Rohm |
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3 / 12 page  www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. Data Sheet RGT50NS65D lIGBT Electrical Characteristics (at T j = 25°C unless otherwise specified) Parameter Symbol Conditions Values Unit Min. Typ. Max. pF Output Capacitance Coes VGE = 0V - 56 - Reverse Transfer Capacitance Cres f = 1MHz Input Capacitance Cies VCE = 30V - 1400 - - 22 - Total Gate Charge Qg VCE = 300V - 49 - nC Gate - Emitter Charge Qge IC = 25A - 15 - Gate - Collector Charge Qgc VGE = 15V - 19 - Turn - on Delay Time td(on) IC = 25A, VCC = 400V - 27 - ns Rise Time tr VGE = 15V, RG = 10Ω - 32 - Turn - off Delay Time td(off) Tj = 25°C td(off) Tj = 175°C Turn - on Delay Time td(on) IC = 25A, VCC = 400V - 28 - - 88 - Fall Time tf Inductive Load - 65 - Reverse Bias Safe Operating Area RBSOA IC = 75A, VCC = 520V FULL SQUARE - VP = 650V, VGE = 15V RG = 50Ω, Tj = 175°C - 100 - Fall Time tf Inductive Load - 110 - ns Rise Time tr VGE = 15V, RG = 10Ω - 37 - Turn - off Delay Time μs VGE = 15V Tj = 25°C Short Circuit Withstand Time tsc VCC ≦ 360V 5 - - 3/11 2016.01 - Rev.A |
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