STL260N4F7 datasheet(3/16 Pages) STMICROELECTRONICS

Part #	STL260N4F7

Description	N-channel 40 V, 0.9 mΩ typ., 120 A, STripFET F7 Power MOSFET in a PowerFLAT 5x6 package

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Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 3. On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

VGS = 0 V, ID = 250 μA

40

V

IDSS

Zero gate voltage

drain current

VGS = 0 V, VDS = 40 V

1

µA

IGSS

Gate-body leakage

current

VDS = 0 V, VGS = 20 V

100

nA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

2

4

V

RDS(on)

Static drain-source on-

resistance

VGS = 10 V, ID = 24 A

0.9

1.1

mΩ

Table 4. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 25 V, f = 1 MHz, VGS = 0 V

-

5000

-

pF

Coss

Output capacitance

-

1800

-

pF

Crss

Reverse transfer capacitance

-

145

-

pF

Qg

Total gate charge

VDD = 20 V, ID = 48 A,

VGS = 0 to 10 V

(see Figure 13. Test circuit for gate

charge behavior)

-

72

-

nC

Qgs

Gate-source charge

-

28

-

nC

Qgd

Gate-drain charge

-

14

-

nC

Table 5. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 20 V, ID = 48 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 12. Test circuit for resistive

load switching times and

Figure 17. Switching time waveform)

-

27

-

ns

tr

Rise time

-

22

-

ns

td(off)

Turn-off delay time

-

45

-

ns

tf

Fall time

-

18

-

ns

STL260N4F7

Electrical characteristics

DS11198 - Rev 5

page 3/16

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